| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a patterning method in which occurrence of poor processing of a wafer can be prevented. <P>SOLUTION: The patterning method comprises a step (step 2) for forming a resist film by coating a substrate or a wafer W with resist, and forming a protective film by coating the wafer W with protective liquid; a step (step 5) performing immersion exposure of a predetermined pattern under a state where the resist film formed on the wafer W is immersed into liquid having a refractive index higher than that of water; a step (step 8) for developing the resist film after immersion exposure; and steps (steps 4, 6) for cleaning the wafer W after formation of the resist film before immersion exposure, and after immersion exposure and before development by using the high refractive index liquid as cleaning liquid. <P>COPYRIGHT: (C)2008,JPO&INPIT |
