| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is used in a high-temperature environment and can improve the long-term reliability of power semiconductor element connecting portions. <P>SOLUTION: The power semiconductor device comprises a wiring board consisting of an insulation substrate and an interconnection formed on the surface of the insulation substrate, a plurality of power semiconductor elements arranged on the interconnection of the wiring board, a first plate-like connection interconnection for electrically connecting the power semiconductor elements and external connection terminals, and a second plate-like connection interconnection for electrically connecting the interconnection of the wiring board and the external connection terminals. Connections for connecting the first and second plate-like interconnections and the power semiconductor elements consist of a soldering material and a plurality of conductors which are harder than the soldering material. The conductors are coated with the soldering material. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
