| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer for semiconductor devices which can improve current gainβ, and its manufacturing method. SOLUTION: In the epitaxial wafer for semiconductor devices wherein a collector layer (3) consisting of at least a group III-V compound semiconductor, a base layer (4), and an emitter layer (5) are laminated and formed on a substrate (1), C density distribution in the base layer (4) is low near an interface between the emitter layer (5) and it. COPYRIGHT: (C)2008,JPO&INPIT
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