| 摘要 |
PROBLEM TO BE SOLVED: To conduct a stable silicon anisotroic etching, while preventing increase in the cost and decrese in the througput. SOLUTION: An Si wafer 2 and a chemical tank 4 for charging a chemical solution 1 for conducting an anisotropic etching of the Si wafer 2 are arranged in the inside of an etching draft 7 with a pipe 6 for emission connected. A heater 5 for heating the chemical solution 1 is provided at the bottom of the chemical tank 4. A hydrogen concentration meter 8 is provided in the etching draft 7 or in the pipe 6 for emission. The Si wafer 2 is etched with the hydrogen concentration value that is measured by the hydrogen concentration meter 8 monitored. COPYRIGHT: (C)2008,JPO&INPIT
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