| 摘要 |
The present invention generally relates to materials that may be used to construct photoelectrodes. It more specifically relates to nanostructured metal oxide materials that may be used in photoelectrodes. In a composition aspect, the present invention provides a metal oxide film. The film ranges in thickness from 20 nm to 200 nm. There are at least 10 individual structures on the film surface within a 0.25 mum<SUP>2 </SUP>area.
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