| 摘要 |
There are provided a TFT substrate for an LCD apparatus and a method of manufacturing the same. A substrate ( 10 ), a diffusion barrier layer ( 11 ) and a copper alloy layer ( 12 ) are formed on the TET substrate, consecutively. The copper alloy includes a material from about 0.5 at % to about 15 at % to form a gate wiring layer. The material is used to form the diffusion barrier layer ( 11 ). A compound that comprises a material such as Zr, Ti, Hf, V, Ta, Ni, Cr, Nb, Co, Mn, Mo, W, Rh, Pd, Pt, etc. is deposited on the diffusion barrier layer ( 11 ) to a thickness from about 50 Å to about 5,000 Å. The deposited compound is then heat treated to convert the deposited compound into a silicide compound ( 11 b). The transistor substrate has low resistance and high conductance. Also, etching process is simplified, and a mutual diffusion is prevented by means of the thin diffusion barrier layer. |
