GALLIUM OXIDE-ZINC OXIDE SPUTTERING TARGET, METHOD FOR FORMING TRANSPARENT CONDUCTIVE FILM, AND TRANSPARENT CONDUCTIVE FILM

摘要

Disclosed is a high-density gallium oxide-zinc oxide sintered body sputtering target for forming a transparent conductive film. This sputtering target is characterized by containing 20-2000 mass ppm of zirconium oxide. By adding a small amount of a specific element to a gallium oxide (Ga2O3)-zinc oxide (ZnO) sputtering target (GZO type target) for forming a transparent conductive film, the conductivity and bulk density of the target can be improved. In other words, it is disclosed a sputtering target wherein the sintering density is improved and formation of nodules is suppressed by improving the components composition, thereby preventing abnormal discharge and formation of particles. Also disclosed are a method for forming a transparent conductive film by using such a target, and a transparent conductive film formed by such a method.