| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor circuit device in which a low resistance uniform thickness barrier metal is formed. SOLUTION: The manufacturing method of a semiconductor circuit device includes a step of forming a first film subjected to plasma treatment after a TiN film is deposited by a chemical vapor deposition method (CVD) with tetrakis dimethylamino titanium (TDMAT) taken as a stock material. Further, the manufacturing method of the semiconductor circuit device includes a step of forming a second film by depsositing a TiN film by the chemical vapor phase deposition method (CVD) with a flow rate of tetrakis dimethylamino titanium (TDMAT) of 2 to 5 mg per minute. COPYRIGHT: (C)2008,JPO&INPIT
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