发明名称 SUBSTRATE HAVING BLIND HOLE AND METHOD FOR FORMING BLIND HOLE
摘要 The present invention relates to a substrate having a blind hole and a method for forming the blind hole. The method for forming the blind hole in the substrate includes: (a) providing a substrate having a lower dielectric layer, a copper layer, and an upper dielectric layer; and (b) forming an upper dielectric layer through hole and a copper layer through hole by etching through the upper dielectric layer and the copper layer with laser, and forming a cavity on the lower dielectric layer by using the laser, in which the aperture of the cavity on the upper surface of the lower dielectric layer is larger than that of the copper layer through hole. Therefore, a blind hole space in a shape of a rivet is formed, so that after the blind hole space is electroplated with an electroplating copper layer, the bonding force between the electroplating copper layer and the copper layer is enhanced.
申请公布号 US2008041822(A1) 申请公布日期 2008.02.21
申请号 US20070837010 申请日期 2007.08.10
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 WANG TE-CHUN
分类号 H01B13/00 主分类号 H01B13/00
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