发明名称 |
Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using |
摘要 |
A phase change memory element and method of forming the same. The memory element includes a phase change material layer electrically coupled to first and second conductive material layers. A energy conversion layer is formed in association with the phase change material layer, and electrically coupled to a third conductive material layer. An electrically isolating material layer is formed between the phase change material layer and the energy conversion layer.
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申请公布号 |
US2008044632(A1) |
申请公布日期 |
2008.02.21 |
申请号 |
US20060504002 |
申请日期 |
2006.08.15 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LIU JUN;VIOLETTE MIKE;DALEY JON |
分类号 |
B32B9/04;B32B15/04 |
主分类号 |
B32B9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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