发明名称 Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using
摘要 A phase change memory element and method of forming the same. The memory element includes a phase change material layer electrically coupled to first and second conductive material layers. A energy conversion layer is formed in association with the phase change material layer, and electrically coupled to a third conductive material layer. An electrically isolating material layer is formed between the phase change material layer and the energy conversion layer.
申请公布号 US2008044632(A1) 申请公布日期 2008.02.21
申请号 US20060504002 申请日期 2006.08.15
申请人 MICRON TECHNOLOGY, INC. 发明人 LIU JUN;VIOLETTE MIKE;DALEY JON
分类号 B32B9/04;B32B15/04 主分类号 B32B9/04
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