| 摘要 |
A memory structure comprises a semiconductor substrate, an active are positioned in the semiconductor substrate, a plurality of doped regions positioned in the semiconductor substrate, a first conductive plug connecting a bit line and one of the doped regions and a second conductive plug connecting a capacitor and another one of doped regions. The first conductive plug includes a first block positioned in the active area and a second block positioned at a first side of the active area, and the bit line electrically connects the second block. The second conductive plug includes a third block positioned in the active area and a fourth block positioned at a second side of the active area, and the capacitor electrically connects the fourth block. The first side of the active area is opposite to the second side of the active area.
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