发明名称 |
HIGH-VOLTAGE MOS TRANSISTOR DEVICE AND METHOD OF MAKING THE SAME |
摘要 |
<p>A substrate (1) is provided with a deep body well (2), a counter drift well region (3), a drain well region (4) in the vicinity of the drain region (8), a drift region (5), a channel well region (6) and a source region (7). A gate electrode (9) and a gate dielectric (10) are arranged above an area provided as a channel region between the source region (7) and the drift region (5). The drain well region (4) enables the application of an especially deep body well (2) while providing an extended vertical distance for the voltage drop. A high blocking voltage, a precisely short channel and a well-defined threshold voltage are obtained. The structure of the wells is appropriate for the integration of further high-voltage devices, especially NMOS transistors.</p> |
申请公布号 |
WO2008020072(A1) |
申请公布日期 |
2008.02.21 |
申请号 |
WO2007EP58566 |
申请日期 |
2007.08.17 |
申请人 |
AUSTRIAMICROSYSTEMS AG;PARK, JONG MUN;KNAIPP, MARTIN;ROEHRER, GEORG |
发明人 |
PARK, JONG MUN;KNAIPP, MARTIN;ROEHRER, GEORG |
分类号 |
H01L29/78;H01L21/336;H01L29/06;H01L29/08;H01L29/10;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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