| 摘要 |
The device in the form of treatment chamber for production of defined layers for applying on semiconductor substrates by electrochemical or electroless deposition of metals and/or metallic compounds, comprises a container (2) with a cavity (3), which is flow-throughable with liquid (6) and which exhibits open side (5), a cover element (4) for closing the side with rotatable clamping device for holding a substrate, means for influencing the electric field and/or the current and means for driving the cover element. The device in the form of treatment chamber for production of defined layers for applying on semiconductor substrates by electrochemical or electroless deposition of metals and/or metallic compounds, comprises a container (2) with a cavity (3), which is flow-throughable with liquid (6) and which exhibits open side (5), a cover element (4) for closing the side with rotatable clamping device for holding a substrate, means for influencing the electric field and/or the current and means for driving the cover element. The cover element and the means for driving are mutually stored by bearing. The cover element is arranged completely or partially rotatable. The clamping device absorbs substrates of different size and/or form. The device further comprises a power source, an anode, a contacting element, electrical lines for producing a contact between the source and the substrate, means for the automatic kinematic coupling of the cover element with the means for driving, and means for the automatic electric coupling of the cover element with the contacting element. An independent claim is included for a method for the production of defined layers for applying on semiconductor substrates by electrochemical or electroless deposition of metals and/or metallic compounds. |
