THIN FILM TRANSISTOT AND FABRICATION METHOD OF THE SAME

摘要

A thin film transistor and a manufacturing method of the same are provided to improve reliability and a yield by preventing the contamination of a semiconductor layer due to diffusion of impurities of a metal substrate in a thermal process. A buffer layer(110) is positioned on a metal substrate(100). A source electrode(120a) and a drain electrode(120b) are positioned on the buffer layer. A semiconductor layer(130) is positioned on the metal substrate including the source electrode and the drain electrode and includes a constant region corresponding to the source electrode and the drain electrode. A gate insulating layer(140) is positioned on the metal substrate including the semiconductor layer having the oxide. A gate electrode(150) is positioned on the gate insulating layer and corresponds to a constant region of the semiconductor layer.