| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrooptical device capable of displaying an image of high quality. SOLUTION: The method of manufacturing the electrooptical device includes the steps of: forming a transistor including a semiconductor layer 1a having a first junction region and a second junction region 1c on a substrate 10; laminating an interlayer dielectric 41 above the semiconductor layer; and etching the interlayer dielectric to bore a contact hole for electrically connecting a storage capacitor 70 to a pixel-electrode-line-side source/drain region of the semiconductor layer and also dig a lengthwise groove 810 along the second junction region. Further, the method includes a stage of forming the storage capacitor on the interlayer dielectric so that the storage capacitor partially overlaps with the semiconductor layer and is electrically connected to the pixel-electrode-line-side source/drain region through the contact hole, and also has an in-groove part 70t overlapping the groove. COPYRIGHT: (C)2008,JPO&INPIT |
