| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of peeling and removing a resist film without using a laser beam of a high photon cost, and without damaging a wafer substrate at a low cost. SOLUTION: When peeling and removing the resist film formed on the wafer substrate, the laser beam is selected which can be transmitted through the resist film and absorbed by the wafer substrate, and a liquid film capable of transmitting the laser beam is formed on the resist film. The resist film is irradiated with the selected laser beam through the liquid film, and transmitted through the resist film without practically causing ablation on the resist surface. Heat which does not damage a wafer surface is generated on the boundary of the wafer substrate and the resist film. The liquid film is locally boiled and evaporated on the boundary of the resist film surface and liquid, an impact is applied to the resist film and the film is peeled. COPYRIGHT: (C)2008,JPO&INPIT |
