| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element for achieving heat dissipation property and low threshold currents without adding any special process. SOLUTION: A semiconductor integrated structure 11 is arranged at one face side of a substrate 10. The semiconductor integrated structure 11 is configured by laminating: a lower DBR mirror layer 12; a low spacer layer 13; an active layer 14; an upper spacer layer 15; a current constriction layer 16; an upper DBR mirror layer 17; and a contact layer 18 in this order from the substrate 10 side. A columnar mesa section 19 and a columnar heat dissipation section 20 are integrally formed in the semiconductor integrated structure 11. The mesa section 19 is formed corresponding to a region including the non-oxidized region (current injection region 16B) of the current constriction layer 16, and the heat dissipation section 20 is formed corresponding to the oxidized region (current constriction region 16A) of the current constriction layer 16. COPYRIGHT: (C)2008,JPO&INPIT
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