| 摘要 |
PROBLEM TO BE SOLVED: To achieve a semiconductor device including an n channel MIS transistor and a p channel MIS transistor formed on one substrate wherein resistances at a gate electrode and a diffusion layer hardly increase, and to provide its manufacturing method. SOLUTION: The semiconductor device comprises an n channel MIS transistor 11 and a p channel MIS transistor 12 both formed on a silicon substrate 21. The n channel MIS transistor 11 includes a first gate electrode 14A, an n-type source-drain region 16c, and a plasma reaction film 18 that covers the upper surface of the n-type source-drain region 16c and the first gate electrode 14A. The p channel MIS transistor 12 includes a second gate electrode 14B, a p-type source-drain region 16f, and a second plasma reaction film 18 that covers the upper surface of the p-type source-drain region 16f and the second gate electrode 14B. COPYRIGHT: (C)2008,JPO&INPIT
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