| 摘要 |
PROBLEM TO BE SOLVED: To provide structures of semiconductor devices having a novel element isolation structure and a method of manufacturing the semiconductor device structure, and particularly to provide a semiconductor device having such an excellent element isolation structure as to be capable of effectively suppressing a leakage current of a junction and deterioration of a short channel characteristic, and to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device comprises a semiconductor substrate and a plurality of semiconductor elements arranged on the semiconductor substrate with an element isolation region therebetween. The element isolation region has a liner nitride film formed on the lower side surface of an inner wall of a trench formed in the semiconductor substrate; a first insulating film formed on the upper side surface and upper surface of the trench inner wall, and having a high etching resistance; and a second insulating film formed in a region surrounded by the liner nitride film, and the first insulating film, and having a tensile stress generated therein. COPYRIGHT: (C)2008,JPO&INPIT
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