| 摘要 |
An antenna of a plasma processing apparatus includes first and second wiring groups that respectively are electrically coupled to different RF power source. The first wiring group is formed on an internal region and an intermediate region, and the first wiring group transfers a power of a first RF power source from the intermediate region to the internal region. The second wiring group is formed on the intermediate region and an outer region. The second wiring group receives a power of a second RF power source from the intermediate region, or alternatively from the outer region. The frequency of the second RF power applied to the second wiring group is lower than the frequency of the first RF power applied to the first wiring group, thereby reducing the plasma loss at the outer region.
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