MEMORY DEVICE WITH NON-ORTHOGONAL WORD AND BIT LINES AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor memory device such as a dynamic random access memory (DRAM) has substantially non-orthogonal word (104) and bit (102) lines. For a given memory cell size, such as six square lithographic features (6F²), the non-orthogonal layout allows for larger-pitch word and bit lines when compared to the orthogonal layout of the word and bit lines.