METHOD FOR FORMATION OF OXIDIZED ALUMINUM NITRIDE FILMS

摘要

A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber (10), depositing an AfN film on the substrate (40), and post-treating the AIN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AIN film with substantially no increase in the AIN film thickness. The method can also include pre-treating the substrate (40) prior to AIN deposition, post-anneaiing the AIN film before or after the post-treatment, or both.