| 摘要 |
A high frequency low noise amplifier comprises a current amplifier stage (216) in parallel with an LC resonator (212) and a cascode stage (214) arranged in series. Optionally, a dynamically variable DC bias voltage Vb1 is applied to a gate of a first transistor M1 in the cascode amplifier (214). The amplifier achieves a large power gain whilst preserving impedance isolation. The P1dB compression point is improved whilst maintaining a good noise factor. The exemplary circuit is simple and cost effective to produce. |
