IMAGE SENSOR HAVING PHOTO DIODE WITH N-WELL AND METHOD OF FABRICATING THE SAME

摘要

An image sensor having a photodiode with an n-well and a manufacturing method thereof are provided to increase a junction depth of the photodiode by forming the n-well before a depth n-type impurity region is formed. An active region defined by an isolation layer is disposed in a semiconductor substrate(1) having a p-well(PW). A transmission gate electrode(TG) is disposed to cross the active region on the semiconductor substrate. A shallow p-type impurity region(PPD) is disposed in the active region at one side of the transmission gate electrode. A deep n-type impurity region(NPD) is disposed under the shallow p-type impurity region. An n-well(NW) is diposed under the n-type impurity region to have a region shallower than the n-type impurity region.