| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element comprising a transparent electrode having an oxide surface and p- and n-electrodes being made of a common material. <P>SOLUTION: The nitride semiconductor element has an n-type nitride semiconductor layer (2) and a p-type semiconductor layer (4), an n-electrode (11) formed on the n-type nitride semiconductor layer (2), a transparent electrode (5) formed on the p-type semiconductor layer (4), and a p-type electrode (10) formed on a part of the transparent electrode (5). The n- and p-electrodes (11), (10) include a first and second metal layers (6), (7), the first metal layer (6) contains a platinum group metal and is formed like discrete islands, and the second metal layer (7) is made of a metal ohmic-contactable with the n-type nitride semiconductor layer (2), and contacts with this semiconductor layer (2) exposed between the islands of the first metal laminate (6) or the transparent electrode (5). <P>COPYRIGHT: (C)2008,JPO&INPIT |
