发明名称 RESIST UNDERCOAT FILM MATERIAL, AND RESIST UNDERCOAT FILM SUBSTRATE AND PATTERN FORMING METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist undercoat film material for a multilayer resist process, in particular, the material for a two-layer resist process or a three-layer resist process, which has the function to neutralize an amine-based contaminant from a substrate to reduce adverse effect such as a resist pattern footing on an overcoat resist. <P>SOLUTION: The resist undercoat film material for forming an undercoat film of a chemically amplifying photoresist layer comprises a crosslinking polymer and a thermal acid generator expressed by general formula (1a):R<SP>1</SP>CF<SB>2</SB>SO<SB>3</SB><SP>-</SP>(R<SP>2</SP>)<SB>4</SB>N<SP>+</SP>which generates an acid by heating at 100&deg;C or higher. A resist undercoat film substrate is provided which has a resist undercoat film formed by using the resist undercoat film material. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008039815(A) 申请公布日期 2008.02.21
申请号 JP20060209699 申请日期 2006.08.01
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;FUJII TOSHIHIKO;OSAWA YOICHI
分类号 G03F1/90;G03F7/11;G03F7/26;H01L21/027 主分类号 G03F1/90
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