| 摘要 |
PROBLEM TO BE SOLVED: To surely obtain gettering effects in an SOI substrate. SOLUTION: An SiC-containing layer 3 is arranged between a silicon oxide film 2 functioning as a buried oxide film and a silicon layer 4 functioning as an active layer. Namely, the SOI substrate has a structure in which the SiC-containing layer 3 is partially formed in the active layer. When forming the silicon layer 4 directly on the surface of the silicon oxide film 2, it is impossible to sufficiently generate lattice distortion in the silicon layer 4 since a Young's modulus of the silicon oxide film 2 is smaller than that of the silicon layer 4. However, the SiC-containing layer 3 having a thermal expansion coefficient and a Young's modulus larger than those of single-crystal silicon is formed on the surface of the silicon oxide film 2. Consequently, it is possible to generate the lattice distortion between the SiC-containing layer and the silicon oxide film when executing heat treatment during a wafer laminating step or during a semiconductor device manufacturing step. COPYRIGHT: (C)2008,JPO&INPIT |
