| 摘要 |
PROBLEM TO BE SOLVED: To increase an area of the contact portion between a body region and a wiring layer of a vertical gate semiconductor device without reducing an area of a contact portion between a source region and the wiring layer. SOLUTION: A gate electrode 10 is formed at the upper portion of a trench 6 so that a concave portion may remain. Then, an insulating film 11 is formed on the gate electrode 10 so that the concave portion may be buried halfway. As a result, the contact portion between the source region and the wiring layer is set on the wall surface of the trench 6, and the contact portions between the body regions 13 and 16, and the wiring layer are set on the wall surface of the trench 6 and the top surface of the body region 16. COPYRIGHT: (C)2008,JPO&INPIT
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