| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, although a semiconductor substrate needs to have its reverse side polished to have a thin drift region in order to form an NPT type IGBT, a semiconductor device warps and so on, since a collector region is formed by performing ion injection, heat treatment, etc., thereafter from the reverse side of the weakened semiconductor substrate. SOLUTION: In a method of manufacturing the semiconductor device, the film thickness in the drift region 2 is previously adjusted with the film thickness of an epitaxial layer. A collector region 6 is obtained only by polishing the semiconductor substrate 1A. Especially, a semiconductor substrate 1A having high impurity density is used to obtain a short turn-off time and characteristics suitable to a high-speed switching element, even if the film thickness in the collector region 6 is large. COPYRIGHT: (C)2008,JPO&INPIT
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