| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser for which a manufacturing process can be simplified. SOLUTION: A first laser structure section 3 emitting a laser beam of a 780 nm wavelength band and a second laser structure section 4 emitting a laser beam of a 650 nm wavelength band are formed on an n-type GaAs substrate 2. The first laser structure section 3 has a laminate structure of an n-type AlGaAs cladding layer 32, an MQW active layer 33 and a p-type AlGaAs cladding layer 34, and the second laser structure section 4 has a laminate structure of an n-type InGaAlP cladding layer 42, an MQW active layer 43 and a p-type InGaAlP cladding layer 44. Al<SB>X</SB>Ga<SB>1-X</SB>As (X=0.46) is used as a material of the p-type AlGaAs cladding layer 34 and InGa<SB>1-Y</SB>Al<SB>Y</SB>P (Y=0.7) is used as a material for the p-type InGaAlP cladding layer 44. COPYRIGHT: (C)2008,JPO&INPIT
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