| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-resistance contact-hole forming method and a semiconductor device having a low-resistance contact hole. SOLUTION: As shown in Fig. 1a, an n-GaN layer 11 is formed on a p-GaN layer 10 whose C face is made as the surface. Next, an SiO<SB>2</SB>film 12 is formed and the SiO<SB>2</SB>film 12 at the part to be formed with a contact hole is removed (Fig. 1b). Then, a part of the n-GaN layer 11 is etched until the surface of the p-GaN layer 10 is exposed while using the SiO<SB>2</SB>film 12 as a mask so as to form the contact hole (Fig. 1c). On that occasion, a damage layer 13 is formed on the surface of the exposed p-GaN layer 10. Subsequently, side faces of the contact hole are subjected to wet-etching by a TMAH aqueous solution while allowing the SiO<SB>2</SB>film 12 to remain intact (Fig. 1d). After that, the SiO<SB>2</SB>film 12 is removed so as to form the low-resistance contact hole (FIG. 1e). COPYRIGHT: (C)2008,JPO&INPIT
|
