| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching device or the like capable of easily forming a taper to the side face of a trench formed to a work. SOLUTION: In a dry etching method, an etching gas and a deposition gas are introduced alternately into a reaction chamber 2, a plasma is generated, and the trench section 25 is formed to the work 4 fitted to the reaction chamber by the plasma. In the dry etching method, the other gas is added to one gas when the etching gas or the deposition gas is introduced into the reaction chamber 2, and both gases are introduced into the reaction chamber 2. COPYRIGHT: (C)2008,JPO&INPIT
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