发明名称 MAGNETO-RESISTIVE ELEMENT, THIN FILM MAGNETIC HEAD, AND THEIR MANUFACTURING METHODS
摘要 PROBLEM TO BE SOLVED: To provide an MR element securing high crystallinity at a tip of a magnetic domain control layer located in the vicinity of an MR laminate, a thin film magnetic head, a manufacturing method of the MR element, and a manufacturing method of the thin film magnetic head. SOLUTION: The MR element in which current flows in the vertical direction to a layered surface includes: a lower electrode layer; the MR laminate laminated on the lower electrode layer; a magnetic domain control bias layer located on both breadthwise sides of a track of the MR laminate and made of a material containing a hcp structure at least partially; a metallic layer formed to continuously cover the magnetic domain control bias layer and the MR laminate on them and made of a material having a bcc structure; and an upper electrode layer formed on the metallic layer. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008041675(A) 申请公布日期 2008.02.21
申请号 JP20060209580 申请日期 2006.08.01
申请人 TDK CORP 发明人 KAGAMI TAKERO;TANAKA KOSUKE;HARA SHINJI;KANETANI TAKAYASU;MORIIZUMI NOBUYOSHI
分类号 H01L43/08;G11B5/39;H01L43/12 主分类号 H01L43/08
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