发明名称 |
MAGNETO-RESISTIVE ELEMENT, THIN FILM MAGNETIC HEAD, AND THEIR MANUFACTURING METHODS |
摘要 |
PROBLEM TO BE SOLVED: To provide an MR element securing high crystallinity at a tip of a magnetic domain control layer located in the vicinity of an MR laminate, a thin film magnetic head, a manufacturing method of the MR element, and a manufacturing method of the thin film magnetic head. SOLUTION: The MR element in which current flows in the vertical direction to a layered surface includes: a lower electrode layer; the MR laminate laminated on the lower electrode layer; a magnetic domain control bias layer located on both breadthwise sides of a track of the MR laminate and made of a material containing a hcp structure at least partially; a metallic layer formed to continuously cover the magnetic domain control bias layer and the MR laminate on them and made of a material having a bcc structure; and an upper electrode layer formed on the metallic layer. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008041675(A) |
申请公布日期 |
2008.02.21 |
申请号 |
JP20060209580 |
申请日期 |
2006.08.01 |
申请人 |
TDK CORP |
发明人 |
KAGAMI TAKERO;TANAKA KOSUKE;HARA SHINJI;KANETANI TAKAYASU;MORIIZUMI NOBUYOSHI |
分类号 |
H01L43/08;G11B5/39;H01L43/12 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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