| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has improved matching property with the formation process of an MIS transistor, and has a diode having improved characteristics, and to provide a manufacturing method of the semiconductor device. SOLUTION: The diode comprises: a first region 15a containing p-type impurities formed in a polycrystalline silicon film 15, and a second region 15b containing n-type impurities formed adjacent to the first region 15a. An insulating film 13, formed on the surface of a semiconductor substrate 11, is formed on the polycrystalline silicon film 15; a boundary surface 17 between the first and second regions 15a, 15b is formed along the direction of the film thickness of the polycrystalline silicon film 15; and a first conductive film 21a and a second conductive film 21b are formed on the first and second regions 15a, 15b, respectively, while they are respectively separated from the boundary surface 17 by a prescribed distance. COPYRIGHT: (C)2008,JPO&INPIT
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