发明名称 |
Method of chemical-mechanical polishing and method of forming isolation layer using the same |
摘要 |
A method of chemical-mechanical polishing (CMP) and a method of forming an isolation layer using the same are provided. The method of chemical-mechanical polishing includes performing a first chemical-mechanical polishing operation on an insulating layer having a zeta potential with a first polarity by supplying a first slurry on the insulating layer, wherein the first slurry includes a first abrasive and ionic surfactants having a zeta potential with a second polarity opposite to the first polarity. The method of forming an isolation layer includes forming a mask layer on a substrate, etching the substrate to a desired depth using the mask layer such that a trench is formed in the substrate, forming the insulating layer on the substrate and performing the first chemical-mechanical polishing operation described above.
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申请公布号 |
US2008045018(A1) |
申请公布日期 |
2008.02.21 |
申请号 |
US20070826899 |
申请日期 |
2007.07.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
YOON IL-YOUNG;CHOO JAE-OUK;KOO JA-EUNG |
分类号 |
H01L21/461 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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