METHOD FOR PREPARAING GZO THIN FILM BY MAGNETRON SPUTTERING

摘要

A method of forming a GZO thin film by using magnetron sputtering is provided to prepare the GZO thin film having good structure, electrical or optical characteristic by using the magnetic sputtering at an oxygen/argon mixture gas atmosphere of a specific flow ratio. A zinc oxide thin film doped with gallium is deposited on a substrate having a temperature of 20 to 400 deg.C under an atmosphere containing a gas mixed with oxygen and argon. The zinc oxide thin film doped with gallium is subjected to post heat treatment. The substrate is heated by a temperature of 250 to 350 deg.C. A flow ratio of the oxygon/argon mixture gas is with the range of 0.2 to 0.5.