| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory device capable of reading and writing only by the switching operation of a conductive metal line, and to provide its manufacturing method. SOLUTION: This non-volatile memory device is equipped with multiple word lines 20 and 70 formed in parallel with each other, a bit line 50 that passes through between multiple word lines 20 and 70 and warped toward one word line, and a trap site 30 that traps electric charges for electrostatically fixing the warped bit line 50 formed in an insulated fashion between a word line adjoining one side of the bit line 50 and the bit line 50. COPYRIGHT: (C)2008,JPO&INPIT |
