| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which improves an yield compared with a conventional device. SOLUTION: The method of manufacturing the semiconductor device is provided with a process of forming mask films 21 and 22 on a semiconductor substrate positioned in an element area for forming an element separation film 2, a process of measuring sizes of mask films 21 and 22 a process of calculating a thermal oxidation amount for forming the element separation film 2 based on the difference of a measured size from the design size of the mask films 21 and 22, and a process of forming the element separation film 2 by thermal oxidation of the semiconductor substrate 1 with the mask films 21 and 22 as a mask according to the calculated thermal oxidation amount. COPYRIGHT: (C)2008,JPO&INPIT
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