| 摘要 |
PROBLEM TO BE SOLVED: To provide a 1T type ferroelectric memory easy to fabricate while oxidation of channel and mixing of impurity to the channel of FET can be prevented. SOLUTION: Ferroelectric memory of this invention includes a channel 14 consisting of p-type or n-type semiconductor between a source electrode 12 and a drain electrode 13; a recording layer 15 made of ferroelectric body on the channel 14; and a gate electrode 16. It is characterized that the recording layer 15 consists of a self-organization film stuck chemically onto the surface of the channel 14. In order to fabricate the ferroelectric memory, the recording layer 15 can be formed only by contacting the front face of the channel 14 into solution of the material of the self-organization film. In addition, heating is not required for fabricating the recording layer 15, so oxidation of the channel 14 or the mixing of impurity to the channel 14 can be prevented. COPYRIGHT: (C)2008,JPO&INPIT
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