SEMICONDUCTOR CRYSTAL GROWTH APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor crystal growth apparatus for conducting the mixed exhaust processes by supplying a mixture of ammonium and an organic nitrogen raw material. SOLUTION: The semiconductor crystal growth apparatus 1 for enabling vapor phase growth of a nitride semiconductor by supplying ammonium and organic nitrogen raw material x to a reaction furnace 2 includes a heat treatment unit 3, for previously conducting heat treatment to the organic nitrogen raw material x to be exhausted by bypassing the reaction furnace 2. COPYRIGHT: (C)2008,JPO&INPIT