发明名称 ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>An organic thin film transistor array panel and a method for manufacturing the same are provided to form a thin insulating layer by using a fine contact printing method. A gate electrode is formed on an upper surface of a substrate(110). A gate insulating layer is formed on the gate electrode and the substrate. A source electrode(133) and a drain electrode(135) are formed on the gate insulating layer. The source electrode and the drain electrode are opposite to each other at both sides of the gate electrode. An insulating layer(140) having a first opening(146) is formed on the source electrode and the drain electrode. An organic semiconductor(154) is positioned in the first opening and comes in contact with the source electrode and the drain electrode. A pixel electrode(191) is connected to the drain electrode. The insulating layer includes fluorine and has a thickness of 10 to 7,000 angstroms.</p>
申请公布号 KR20080016192(A) 申请公布日期 2008.02.21
申请号 KR20060077988 申请日期 2006.08.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, JUNG HAN;KIM, YOUNG MIN;CHO, SEUNG HWAN
分类号 H01L29/786 主分类号 H01L29/786
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