发明名称 INTEGRATED CIRCUIT SYSTEM HAVING STRAINED TRANSISTOR
摘要 An integrated circuit system is provided including forming a circuit element on a wafer, forming a stress formation layer on the wafer, protecting a portion of the stress formation layer, and irradiating the wafer for modification of a stress value of an unprotected portion of the stress formation layer.
申请公布号 US2008044967(A1) 申请公布日期 2008.02.21
申请号 US20060465799 申请日期 2006.08.19
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD.;SAMSUNG;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 TEH YOUNG WAY;WIDODO JOHNNY;PARK JAE EUN;BELYANSKY MICHAEL P.
分类号 H01L21/8238 主分类号 H01L21/8238
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