| 摘要 |
The invention relates to a memory device ( 100 ) comprising a stack of layers including: at least one first active layer ( 102 ) based on a crystalline ionic and electronic conducting material capable of releasing and/or accepting at least one ionic species, at least one second active layer ( 104 ) based on a crystalline ionic and electronic conducting material capable of releasing and/or accepting said ionic species, the first active layer and the second active layer being based on a material that have a high potential variation for a low variation in the concentration of said ionic species; at least one layer forming an electrolyte ( 106 ) between the first active layer and the second active layer, and based on at least one ionic conducting and electronic insulating material; measurement means ( 114 ) for measuring the electrochemical potential difference between said first active layer and said second active layer.
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