SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING, METHOD OF POLISHING USING THE SAME AND METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE

摘要

A slurry composition for chemical mechanical polishing is provided to show a high polishing rate to silicon oxide layer but a low polishing rate to a silicon nitride layer even though a low content of ceria abrasive is contained. A slurry composition for chemical mechanical polishing includes 0.05-0.3wt% of a ceria abrasive, 0.005-0.04wt% of an anionic surfactant, 0.0005-0.003wt% of a polyoxyethylene-based nonionic surfactant, 0.2-1.0wt% of a polyacrylic acid salt having higher molecular weight than the anionic surfactant, and an excess of water. The ceria abrasive has a particle size of 120-200 nm. The polyacrylic acid salt is a polyacrylic acid ammonium salt having a molecular weight of 100,000-400,000.