| 摘要 |
There isprovidedaInGaAlNlightemittingdeviceandamanufacturing nethodthereof. Thelight emittingdevice includesaconductive substrate laving a main surface and a back surface, a metal bonding layerformed 3nthe mainsurface of the substrate, a lightreflecting layerformedon ;he bonding layer, a semiconductorlaminatedlayerat least including a p type anda N type InGaAlNdisposed onthereflecting layer, the P type EnGaAlN layer directly contacting the reflecting layer, and ohmic slectrodes disposed on said N InGaAlN layerand on the back surface of ihe conductive substrate, respectively.
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