发明名称 METHOD OF ION BEAM TREATMENT OF DIELECTRIC SURFACE AND DEVICE FOR IMPLEMENTING THIS METHOD
摘要 A method of an ion beam treatment of a dielectric surface and a device for implementing the same are provided to obtain high efficiency by minimizing generation of defects on the dielectric surfaces to be treated. A flow of directional ions and a flow of directional electrons are formed on a dielectric surface(1) in order to neutralize positive charges. The flow of directional electrons is formed by a plasma cathode discharge using a tunnel type electric field. A part of magnetic flux(6) of the tunnel type electric field crosses simultaneously the dielectric surface to be treated and a cathode surface to be treated. A cathode(4) is made of graphite and/or boron. The part of the magnetic flux of the tunnel type electric field corresponds to at least 20 percent of the entire part of the magnetic flux.
申请公布号 KR20080015709(A) 申请公布日期 2008.02.20
申请号 KR20070045232 申请日期 2007.05.09
申请人 SHIRIPOV VLADIMIR;MARYSHEV SERGEI;KHISAMOV AIRAT;SAVENKA VLADIMIR;LEUCHUK MIKALAI;KHOKHLOV ALEKSANDER 发明人 SHIRIPOV VLADIMIR;LEUCHUK MIKALAI;MARYSHEV SERGEI;SAVENKA VLADIMIR;KHISAMOV AIRAT;KHOKHLOV ALEKSANDER
分类号 H01J23/00;H01J7/24 主分类号 H01J23/00
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