发明名称 |
METHOD OF ION BEAM TREATMENT OF DIELECTRIC SURFACE AND DEVICE FOR IMPLEMENTING THIS METHOD |
摘要 |
A method of an ion beam treatment of a dielectric surface and a device for implementing the same are provided to obtain high efficiency by minimizing generation of defects on the dielectric surfaces to be treated. A flow of directional ions and a flow of directional electrons are formed on a dielectric surface(1) in order to neutralize positive charges. The flow of directional electrons is formed by a plasma cathode discharge using a tunnel type electric field. A part of magnetic flux(6) of the tunnel type electric field crosses simultaneously the dielectric surface to be treated and a cathode surface to be treated. A cathode(4) is made of graphite and/or boron. The part of the magnetic flux of the tunnel type electric field corresponds to at least 20 percent of the entire part of the magnetic flux. |
申请公布号 |
KR20080015709(A) |
申请公布日期 |
2008.02.20 |
申请号 |
KR20070045232 |
申请日期 |
2007.05.09 |
申请人 |
SHIRIPOV VLADIMIR;MARYSHEV SERGEI;KHISAMOV AIRAT;SAVENKA VLADIMIR;LEUCHUK MIKALAI;KHOKHLOV ALEKSANDER |
发明人 |
SHIRIPOV VLADIMIR;LEUCHUK MIKALAI;MARYSHEV SERGEI;SAVENKA VLADIMIR;KHISAMOV AIRAT;KHOKHLOV ALEKSANDER |
分类号 |
H01J23/00;H01J7/24 |
主分类号 |
H01J23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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