MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY PANEL

摘要

A method for manufacturing a thin film transistor substrate is provided to crystallize an amorphous silicon film with a minimum ion amount required for crystallizing to minimize the amount of nickel contained in the crystallized silicon layer by using a sacrificial layer, thereby improving the quality of the thin film transistor substrate. An amorphous silicon film is formed on an insulating substrate(110). A sacrificial film having an embossed surface is formed on the amorphous silicon film. The amorphous silicon film is crystallized into a polycrystalline silicon layer by contacting a metal plate with the sacrificial film and performing thermal treatment on the amorphous silicon film. The metal plate and the sacrificial film are removed. The polycrystalline silicon film is pattern-etched to form a semiconductor pattern(151). A gate insulating layer(140) is formed to cover the semiconductor pattern. A gate line is formed on the gate insulating layer, wherein a portion of the gate line overlaps the semiconductor pattern. Source and drain regions(153,155) are formed by heavily doping conductive impurities into portions of the semiconductor pattern. An interlayer insulating layer is formed to cover the gate line and the semiconductor pattern. A data line(171) and an output electrode(175) respectively connected to the source and drain regions are formed on the interlayer insulating layer.