| 发明名称 |
GROUP III NITRIDE EPITAXIAL LAYERS ON SILICON CARBIDE SUBSTRATES |
| 摘要 |
<p>A method for epitaxial growth of Group III nitrides on a substrate using source gases consistent with metal organic chemical vapor deposition is provided. A heterostructure formed from two Group III nitride epitaxial layers is grown on a substrate in an atmosphere containing minimal hydrogen. The two Group III nitride epitaxial layers differ sufficiently in composition from one another in order to generate a two-dimensional electron gas at their interface. The substrate upon which the heterostructure is grown has a diameter of at least 100 mm.</p> |
| 申请公布号 |
EP1889297(A1) |
申请公布日期 |
2008.02.20 |
| 申请号 |
EP20060740668 |
申请日期 |
2006.04.05 |
| 申请人 |
CREE, INC. |
发明人 |
SAXLER, ADAM, WILLIAM;HUTCHINS, EDWARD, LLOYD |
| 分类号 |
H01L29/778 |
主分类号 |
H01L29/778 |
| 代理机构 |
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