发明名称 |
TRENCH-GATE FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME |
摘要 |
<p>A field effect transistor includes a body region of a first conductivity type over a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminates within the semiconductor region. At least one conductive shield electrode is disposed in the gate trench. A gate electrode is disposed in the gate trench over but insulated from the at least one conductive shield electrode. A shield dielectric layer insulates the at lease one conductive shield electrode from the semiconductor region. A gate dielectric layer insulates the gate electrode from the body region. The shield dielectric layer is formed such that it flares out and extends directly under the body region.</p> |
申请公布号 |
KR20080015863(A) |
申请公布日期 |
2008.02.20 |
申请号 |
KR20077029511 |
申请日期 |
2006.05.24 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
YILMAZ HAMZA;CALAFUT DANIEL;KOCON CHRISTOPHER BOGUSLAW;SAPP STEVEN P.;PROBST DEAN E.;KRAFT NATHAN L.;GREBS THOMAS E.;RIDLEY RODNEY S.;DOLNY GARY M.;MARCHANT BRUCE D.;YEDINAK JOSEPH A. |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|