| 摘要 |
<p>A method of fabricating a semiconductor device is provided to improve a program disturbance defective by improving the difference of an effective field height between a center portion and an edge of a cell region. A tunnel oxide layer(102) and a conductive layer(104) are formed on a semiconductor substrate(100) defined with a cell region and a peripheral region. Portions of the conductive layer, the tunnel oxide layer and the substrate are etched to form trenches. After an insulation layer is formed to bury the trenches, a portion of the insulation layer in the cell region is removed. The insulation layer is patterned to form an isolation film(110). When the portion of the insulation layer is removed, the insulation layer having large patterned region in the peripheral region is simultaneously removed.</p> |
